? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 120 a i ar t c = 25 c30a e as t c = 25 c 1.5 j e ar t c = 25 c45mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 310 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 minute leads-to-tab 2500 v~ weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 1ma r ds(on) v gs = 10 v, i d = i t 0.16 ? notes 1, 2 ds98608d(01/04) isoplus 247 tm g d features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<50pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density g = gate d = drain s = source * patent pending isolated back surface* hiperfet tm power mosfets isoplus247 tm (electrically isolated back surface) n-channel enhancement mode high dv/dt, low t rr , hdmos tm family e 153432 ixfr 32n50q v dss = 500 v i d25 = 30 a r ds(on) = 0.16 ? ? ? ? ? t rr = 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t note 2 18 28 s c iss 3950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 640 pf c rss 210 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 42 ns t d(off) r g = 1 ? (external), 75 n s t f 20 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 26 nc q gd 85 nc r thjc 0.40 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive; pulse width limited by t jm 128 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 0.75 c i rm 7.5 a i f = i s , -di/dt = 100 a/ms, v r = 100 v note: 1. i t test condition: i t = 16a ixfr 32n50q isoplus 247 outline note: 2. pulse test, t 300 s, duty cycle d 2 %
? 2004 ixys all rights reserved t c - degrees c -50-25 0 255075100125150 i d - amperes 0 8 16 24 32 40 v gs - volts 23456 i d - amperes 0 10 20 30 40 50 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 i d = 16a v ds - volts 0 4 8 121620 i d - amperes 0 10 20 30 40 50 v ds - volts 0 4 8 12 16 20 i d - amperes 0 10 20 30 40 50 60 70 80 5v t j = 125 o c v gs = 10v t j = 25 o c t j = 125 o c 6v 5v 6v v gs =10v 9v 8v 7v v gs = 9v 8v 7v i d = 32a t j = 25 o c i d - amperes 0 102030405060 r ds(on) - n orma li ze d 0.8 1.2 1.6 2.0 2.4 2.8 tj=125 0 c tj=25 0 c v gs = 10v 4v figure 3. r ds(on) normalized to 15a/25 o c vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 15a/25 o c vs. t j ixfr 32n50q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 pulse width - seconds 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.02 0.04 0.06 0.08 0.20 0.40 0.60 0.01 0.10 v ds - volts 0 5 10 15 20 25 capacitance - pf 100 1000 10000 v sd - volts 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 20 40 60 80 100 t j =125 o c t j =25 o c gate charge - nc 0 50 100 150 200 250 v gs - v o l ts 0 2 4 6 8 10 12 14 vds=300v i d =30a i g =10ma f = 1mhz crss coss ciss v gs = 0v t j =25 o c vds=300v i d =16a i g =10ma f = 1mhz figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance ixfr 32n50q
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